Advantages：
1. High uniformity, excellent pore/sidewall coverage, and strong adhesion of deposited film.
2. To reduce the risk of thermal damage to the substrate, low-temperature process control is applied in the sputtering system.
3. With the ability to use different target materials for deposition on substrates like ABF, EMC, and PID, our sputter provides a wide scope of processing options.
4. Inline sputtering system provides high throughput and large-sized suitability.
5. Our sputter system offers custom chamber configurations to satisfy particular production needs.
Chip/Wafer Form all support
Excellent Film Adhesion
Much low Thermal Resistance
Yield: 20min/Tray
Thermal Dissipation
Good coating uniformity
High yield
Good sidewall coverage
Process temperature<99℃
SiP EMI
Material : PID,PR,DR
Yield: 150sec /section
U%< 10%
High Aspect Ration Etch
Plasma Etcher
ABF/EMC/PID
High vapor removal rate
Tension test>4N
Yield: 120sec/section
Seeding Sputter
Sputter applications in Package/FO-PLP
Sputter applications in SiP EMI
EMI shielding crucially protects sensitive components in SiP modules that include RF components and antennas. Produced by sputtering, the metal shield layer wards off electromagnetic interference by absorbing or reflecting it, thus protect internal devices and prevent interference with other modules, ensuring stable device performance and module operation.
SUS
Cu
EMC
| Parameter | Details |
| Substrate Material | Si wafer, ceramic, glass, ABF, EMC, PID, etc. |
| Target Material | Metal, oxide, silicide, etc. |
| Uniformity | ±5％ |
| Vacuum Level | 10-7Torr |
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